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Ordering number:676D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB808/2SD1012
Low-Voltage Large-Current Amplifier Applications
Package Dimensions
unit:mm 2033
[2SB808/2SD1012]
( ) : 2SB808
B : Base C : Collector E : Emitter SANYO : SPA
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Ratings (-)20 (-)15 (-)5 (-)0.7 (-)1.5 250 125 -55 to +125
Unit V V V A A mW
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(-)15V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)50mA VCE=(-)2V, IC=(-)500mA Pulse VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz 160* 80 250 (13) 8 MHz pF pF Conditions Ratings min typ max (-)1.0 (-)1.0 960* Unit A A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/1115MY/1283KI, TS No.676-1/5
2SB808/2SD1012
Parameter Collector-to-Emitter Saturation Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Symbol VCE(sat)1 VCE(sat)2 VBE(sat) Conditions IC=(-)5mA, IB=(-)0.5mA IC=(-)100mA, IB=(-)10mA Ratings min typ (-15) 10 (-60) 30 IC=(-)100mA, IB=(-)10mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 (-)0.8 (-)20 (-)15 (-)5 max (-35) 25 (-120) 80 (-)1.2 Unit mV mV mV mV V V V V
* : The 2SB808/2SD1012 are classified by 50mA hFE as follows : 2SB808 2SD1012
160 F 320 280 G 560
160
F
320
280
G
560
480
H
960
No.676-2/5
2SB808/2SD1012
Sample Application Circuit : Low-voltage 3V (PO 120mW) ITL-OTL power amplifier. * Circuit configuration For obtaining an output of more than 100mW, the middle-point voltage at the output stage and the collector voltage of the driver transistor must be VCC/2. Therefore, the output stage is of quasi complementary configuration composed of npn/npn transistors. The phase is reversed by the 2SA608 and the middle-point voltage are the output stage and the collector voltage of the driver transistor are more to be VCC/2 so that the output can be maximized.
Unit (resistance : , capacitance : F)
R1 : Used control idle current For R1=820, use rank F for [TR4, 5 (2SD1012)]. For R1=680, use rank G for [TR4, 5 (2SD1012)].
Main Specifications
Characteristic Current dissipation Output power Votlage gain Total harmonic distortion Input resistance THD=10% PO=10mW PO=50mW PO=10mW Conditions Quiescent, total current dissipation f=400Hz 11.0 to 15.5 120 to 125 43.3 to 45.5 1.4 to 2.6 10.4 to 20.5 f=1kHz 11.0 to 15.5 127 to 130 43.5 to 45.7 1.3 to 2.5 11.0 to 21.0 Unit mA mW dB % k
Note : for above-mentioned hFE rank.
No.676-3/5
2SB808/2SD1012
No.676-4/5
2SB808/2SD1012
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of September, 1998. Specifications and information herein are subject to change without notice.
PS No.676-5/5
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